Electronic asthma

This example introduces an electronic asthma device made of discrete components, which generates high-pressure stimulation pulses, which can play an auxiliary role in the treatment of Kechuan.
Circuit Operation Principle The electronic asthma circuit consists of a self-excited multivibrator, a buffer amplifier circuit and a high voltage generating circuit, as shown in Figure 9-156.
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The self-excited multivibrator is composed of transistors V1, V2, capacitors C1, C2, and resistors R1-R4.
The buffer amplifying circuit is composed of an emitter amplifying tube V3, a bias resistor blank, a R6, and a goose capacitor C3, C4.
The high voltage generating circuit is composed of a potentiometer RP, a resistor R8, an amplifying output tube V4, a self-propelled step-up transformer T and an output socket XS.
The self-excited multivibrator generates an oscillating signal with a frequency of about 5 00 Hz. After V3, V4 amplification and transformer T boosting, a pulse high voltage greater than 100 V is output from the socket XS. The pulse voltage is applied to the sacral acupoints of the patients with cough and asthma (sitting on the head, in the middle of the upper edge of the sternal notch) and the Dazhui (the prosthetic or the lower head, in the seventh neck only Between the subsegmental depression and the middle of the spine, it stimulates the patient's Ren and Du Ermai, and plays a role in relieving cough and relieving asthma.
Adjusting the resistance of the potentiometer RP can change the amplitude of the output pulse high voltage, thereby adjusting the intensity of the electrical pulse stimulation.
Component selection
Rl-R8 selects 1/4W carbon membrane resistor or metal membrane resistor for use.
RP selects the small synthetic carbon film potentiometer with switch of WH-l5 series or WTR series.
Cl and C2 use polyester capacitors or monolithic capacitors; C3 and C4 select aluminum electrolytic capacitors with a withstand voltage greater than lOV.
Vl-V3 selects 3DG6 or S9014 silicon NPN transistor; V4 selects S805O or C8050, 3DGl2 and other silicon NPN transistors.